Product Summary
The FM25L16BGTR is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. The FM25L16BGTR provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. Unlike serial EEPROMs, the FM25L16BGTR performs write operations at bus speed. No write delays are incurred.
Parametrics
FM25L16BGTR absolute maximum ratings: (1)Power Supply Voltage with respect to VSS:-1.0V to +5.0V; (2)Voltage on any pin with respect to VSS:-1.0V to +5.0V and VIN < VDD+1.0V; (3)Storage Temperature:-55℃ to + 125℃; (4)Lead Temperature (Soldering, 10 seconds):300℃; (5)Electrostatic Discharge Voltage:Human Body Model (JEDEC Std JESD22-A114-B):4kV, Charged Device Model (JEDEC Std JESD22-C101-A):1kV; (6)Package Moisture Sensitivity Level:MSL-1.
Features
FM25L16BGTR features: (1)Organized as 2,048 x 8 bits; (2)Unlimited Read/Write Cycles; (3)45 Year Data Retention; (4)NoDelay Writes; (5)Advanced High-Reliability Ferroelectric Process; (6)Up to 18 MHz Frequency; (7)Direct Hardware Replacement for EEPROM; (8)SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1); (9)Hardware Protection; (10)Software Protection; (11)Low Voltage Operation 2.7 to 3.6V; (12)1 μA Standby Current; (13)Industrial Temperature -40℃ to +85℃; (14)“Green”/RoHS 8-pin SOIC Package; (15)“Green”/RoHS 8-pin TDFN Package; (16)TDFN Footprint Conforms to TSSOP-8.
Diagrams
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FM25040A-GA |
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FM25040A-GATR |
Ramtron |
F-RAM 4K (512x8) 5V Grade 1 |
Data Sheet |
Negotiable |
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